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Developmental PTF181301
LDMOS RF Power Field Effect Transistor 130 W, 1805-1880 MHz
Description
The PTF181301 is a 130 W, internally matched GOLDMOS FET intended for GSM and EDGE applications in the 1805 to 1880 MHz band. Full gold metallization ensures excellent device lifetime and reliability.
Features
* * Broadband internal matching Typical EDGE performance - Average output power = 55 W - Gain = 15.5 dB - Efficiency = 32% - EVM = 1.7% Typical CW performance - Output power at P-1dB = 150 W - Gain = 14.5 dB - Efficiency = 47% Integrated ESD protection: Human Body Model, Class 1 (minimum) Excellent thermal stability Low HCI drift Capable of handling 10:1 VSWR @ 28 V, 130 W (CW) output power
EDGE EVM Performance EVM & Efficiency vs. Output Power VDD = 28 V, IDQ = 1.8 A, f = 1879.8 MHz
4 40 Efficiency 3 30
*
EVM RMS (Average %)
*
Efficiency (%)
2
20
* * *
1 EVM 0 35 38 40 43 45 48 50
10
0
Output Power (dBm)
PTF181301A Package 20260
ESD: Electrostatic discharge sensitive device--observe handling precautions!
RF Characteristics at TCASE = 25C unless otherwise indicated
EDGE Measurements (not subject to production test--verified by design/characterization in Infineon test fixture)
VDD = 28 V, IDQ = 1.8 A, P OUT = 55 W, f = 1879.8 MHz
Characteristic
Error Vector Magnitude Modulation Spectrum @ 400 kHz Modulation Spectrum @ 600 kHz Gain Drain Efficiency
Symbol
EVM (RMS) ACPR ACPR Gps
Min
-- -- -- -- --
Typ
1.7 -60 -73 15.5 32
Max
-- -- -- -- --
Unit
% dBc dBc dB %
D
Two-Tone Measurements (tested in Infineon test fixture)
VDD = 28 V, IDQ = 1.8 A, POUT = 130 W PEP, f = 1880 MHz, tone spacing = 1 MHz
Characteristic
Gain Drain Efficiency at -30 dBc IM3 Intermodulation Distortion Developmental Data Sheet 1 of 4
Symbol
Gps
Min
-- -- --
Typ
15.5 35 -30
Max
-- -- --
Unit
dB % dBc 2004-04-28
D
IMD
Developmental PTF181301
DC Characteristics at TCASE = 25C unless otherwise indicated
Characteristic
Drain-Source Breakdown Voltage Drain Leakage Current On-State Resistance Operating Gate Voltage Gate Leakage Current
Conditions
VGS = 0 V, IDS = 10 A VDS = 28 V, V GS = 0 V VGS = 10 V, V DS = 0.1 V VDS = 28 V, IDQ = 1.8 A VGS = 10 V, V DS = 0 V
Symbol
V(BR)DSS IDSS RDS(on) VGS IGSS
Min
65 -- -- 2.5 --
Typ
-- -- 0.07 3.2 --
Max
-- 1.0 -- 4.0 1.0
Unit
V A V A
Maximum Ratings
Parameter
Drain-Source Voltage Gate-Source Voltage Junction Temperature Total Device Dissipation Above 25C derate by Storage Temperature Range Thermal Resistance (TCASE = 70C, 130 W CW) TSTG RJC
Symbol
VDSS VGS TJ PD
Value
65 -0.5 to +12 200 350 2.0 -40 to +150 0.50
Unit
V V C W W/C C C/W
Developmental Data Sheet
2 of 4
2004-04-28
Developmental PTF181301
Ordering Information
Type PTF181301A Package Outline 20260 Package Description Thermally enhanced, flange mount Marking PTF181301A
Package Outline Specifications Package 20260
45 X (2.03 [.080])
2X 12.70 [.500] 4X R 1.52 [.060]
(2X 4.830.50 [.190.020])
D
S
+0.10 LID 13.21 -0.15 [.520 +.004 ] -.006 2X 3.25 [.128] 13.72 [.540] 23.370.51 [.920.020]
2X 1.63 [.064] R
G
SPH 1.57 [.062]
0.51 [.020]
22.350.23 [.880.009] 4.110.38 [.162.015] 0.038 [.0015] -A27.94 [1.100]
1.02 [.040]
34.04 [1.340]
ERA-H-30260-2-1-2302
Notes: Unless otherwise specified 1. Interpret dimensions and tolerances per ASME Y14.5M-1994. 2. Primary dimensions are mm. Alternate dimensions are inches. 3. Pins: D = drain, S = source, G = gate 4. Lead thickness: 0.10 +0.051/-0.025 [.004 +.002/-.001] Find the latest and most complete information about products and packaging at the Infineon Internet page http://www.infineon.com/products
Developmental Data Sheet
3 of 4
2004-04-28
PTF181301 Revision History: 04-04-28 Previous Version: none Page Subjects (major changes since last revision) Developmental Data Sheet
We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: highpowerRF@infineon.com To request other information, contact us at: +1 877 465 3667 (1-877-GOLDMOS) USA or +1 408 776 0600 International
GOLDMOS(R) is a registered trademark of Infineon Technologies AG.
Edition 04-04-28 Published by Infineon Technologies AG, St.-Martin-Strasse 53, 81669 Munchen, Germany (c) Infineon Technologies AG 2004. All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as a guarantee of characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com/rfpower). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 4 of 4

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